MMBT3904 Datasheet, PDF (1/6 Pages) NXP Semiconductors – NPN switching transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
NPN Silicon
3
COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
1
BASE
Value
40
60
6.0
200
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
MMBT3904LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT3904LT1 = 1AM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
40
(I C = 1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
V (BR)CBO
60
(I C = 10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
V (BR)EBO
6.0
(I E = 10 µAdc, I C = 0)
Base Cutoff Current
I BL
—
( V CE= 30 Vdc, V EB = 3.0 Vdc, )
Collector Cutoff Current
I CEX
—
( V CE = 30Vdc, I EB = 3.0Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300 µs, Duty Cycle <2.0%.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
50
nAdc
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