MMBT3640LT1 Datasheet, PDF (1/3 Pages) Motorola, Inc – Switching Transistor

LESHAN RADIO COMPANY, LTD.
Switching Transistor
PNP Silicon
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
–12
–12
–4.0
–80
3
COLLECTOR
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
MMBT3640LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
MMBT3640LT1 = 2J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, V BE = 0)
Collector–Emitter Sustaining Voltage(1 )
(I C = –10 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –100 µAdc, I C = 0)
Collector Cutoff Current
( V CE = –6.0Vdc, V BE = 0)
( V CE = –6.0Vdc, V BE = 0, T A= 65°C)
Base Current Current ( V CE = –6.0Vdc, V EB = 0 )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CES
V CEO(sus)
V _(BR)CBO
V (BR)EBO
I CES
IB
Min
–12
–12
–12
–4.0
—
—
—
Max
Unit
––
Vdc
—
Vdc
––
Vdc
—
–0.01
–1.0
–10
Vdc
µAdc
nAdc
O10–1/3