MMBT2907AWT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
Preliminary Information
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose
mplifier applications. They are housed in the SOT–323/
SC–70 package which is designed for low power surface
mount applications.
3
COLLECTOR
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
2
EMITTER
Value
– 60
– 60
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
MMBT2907AWT1
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RθJA
TJ , Tstg
Max
150
833
–55 to +150
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
V (BR)CEO
(I C = – 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = – 10 mAdc, I E = 0)
V _(BR)CBO
Emitter–Base Breakdown Voltage
(I E = –10µAdc, I C = 0)
V (BR)EBO
Base Cutoff Current
I BL
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
Collector Cutoff Current
I CEX
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
–60
–60
–5.0
—
—
Unit
mW
°C/W
°C
Max
—
—
—
– 50
– 50
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
K2–1/2