MMBT2222AWT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
Preliminary Information
General Purpose Transistors
NPN Silicon
MMBT2222AWT1
These transistors are designed for general
purpose amplifier applications. They are
housed in the SOT–323/SC–70 package which
is designed for low power surface mount
1
applications.
BASE
MAXIMUM RATINGS
3
COLLECTOR
2
EMITTER
3
1
2
CASE 419–02, STYLE 3
SOT–323 /SC – 70
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V _CBO
V _EBO
I_C
Value
40
75
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board,
T_A = 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R_θJA
T_J , T_stg
Max
150
833
–55 to +150
Unit
mW
°C/W
°C
DEVICE MARKING
MMBT2222AWT1 = 1P
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(I _C = 1.0 mAdc, I _B = 0)
V _(BR)CEO
40
Collector–Base Breakdown Voltage
(I _C = 10 µAdc, I _E = 0)
V _(BR)CBO
75
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc, I _C = 0)
V _(BR)EBO
6.0
Base Cutoff Current
(V _CE = 60 Vdc, V _EB = 3.0 Vdc)
I _BL
—
Collector Cutoff Current
(V = 60 Vdc, V = 3.0 Vdc)
CE
EB
I _CEX
—
1. Pulse Test: Pulse Width<300 µs, Duty Cycle<2.0%.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
20
nAdc
10
nAdc
K1–1/2