MMBD914LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – High-Speed Switching Diode

LESHAN RADIO COMPANY, LTD.
High-Speed Switching Diode
3
CATHODE
1
MMBD914LT1
ANODE
3
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
VR
IF
I FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board ⁽¹⁾
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θ JA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBD914LT1 = 5D
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I R = 100 µAdc)
Reverse Voltage Leakage Current
(V R = 20 Vdc)
V (BR)
IR
100
—
(V R = 75 Vdc)
—
Diode Capacitance
(V R = 0, f = 1.0 MHz)
Forward Voltage
(I F = 10 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
CT
—
VF
—
t rr
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
1
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
Max
—
25
5.0
4.0
1.0
4.0
Unit
Vdc
nAdc
µAdc
pF
Vdc
ns
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