MMBD7000LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Dual Switching Diode

LESHAN RADIO COMPANY, LTD.
Dual Switching Diode
1
ANODE
2
CATHODE
3
CATHODE/ANODE
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
V_R
I_F
I _FM(surge)
Value
100
200
500
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board ⁽¹⁾
T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ T _A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P_D
R _{θ JA}
P_D
R _{θ JA}
T _J , T _stg
Max
225
1.8
556
300
2.4
417
–55 to +150
DEVICE MARKING
MMBD7000LT1 = M5C
Unit
Vdc
mAdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
MMBD7000LT1
3
1
2
CASE 318–08, STYLE11
SOT– 23 (TO–236AB)
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I _(BR) = 100 µAdc)
V _(BR)
100
Reverse Voltage Leakage Current
(V _R = 50 Vdc)
(V _R = 100 Vdc)
(V _R = 50 Vdc,125°C)
Forward Voltage
(I _F = 1.0 mAdc)
(I _F = 10 mAdc)
(I _F = 100 mAdc)
Reverse Recovery Time
(I _F = I _R = 10 mAdc) (Figure 1)
Capacitance(V_R=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
I_R
—
I _R2
—
I _R3
—
V_F
0.55
0.67
0.75
t _rr
—
C
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
—
1.0
3.0
100
0.7
0.82
1.1
4.0
1.5
Unit
Vdc
µAdc
Vdc
ns
pF
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