MMBD6100LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – Monolithic Dual Switching Diodes

LESHAN RADIO COMPANY, LTD.
Monolithic Dual Switching Diode
3
CATHODE
ANODE
1
2
ANODE
MMBD6100LT1
3
MAXIMUM RATINGS(EACH DIODE)
Rating
Symbol
Reverse Voltage
Forward Current
Peak Forward Surge Current
VR
IF
I FM(surge)
Value
70
200
500
Unit
Vdc
mAdc
mAdc
1
2
CASE 318–08, STYLE9
SOT– 23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board ⁽¹⁾
T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, ⁽²⁾ T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θ JA
PD
R θ JA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBD6100LT1 = 5BM
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)(EACH DIODE)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I (BR) = 100 µAdc)
V (BR)
70
Reverse Voltage Leakage Current
IR
—
(V R = 50 Vdc)
Forward Voltage
(I F = 1.0 mAdc)
(I F = 100 mAdc)
Reverse Recovery Time
(I F = I R = 10 mAdc,IR(REC)=1.0mAdc) (Figure 1)
Capacitance(VR=0V)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
VF
0.55
0.85
t rr
—
C
—
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
—
0.1
0.7
1.1
4.0
2.5
Unit
Vdc
µAdc
Vdc
ns
pF
G23–1/2