MBD110DWT1 Datasheet, PDF (1/5 Pages) Motorola, Inc – Dual Schottky Barrier Diodes

LESHAN RADIO COMPANY, LTD.
Dual SCHOTTKY Barrier Diodes
Application circuit designs are moving toward the consolidation of
device count and into smaller packages. The new SOT–363 package is
a solution which simplifies circuit design, reduces device count, and
reduces board space by putting two discrete devices in one small six–
leaded package. The SOT–363 is ideal for low–power surface mount
applications where board space is at a premium, such as portable
products.
Surface Mount Comparisons:
SOT–363
Area (mm ² )
4.6
Max Package P D (mW)
120
Device Count
2
SOT–23
7.6
225
1
Space Savings:
Package
SOT–363
1 × SOT–23 2 × SOT–23
40%
70%
MBD110DWT1
MBD330DWT1
MBD770DWT1
6
5
4
1
2
3
SOT–363
CASE 419B–01, STYLE 6
Cathode N/C Anode
6
5
4
The MBD110DW, MBD330DW, and MBD770DW devices are spin–offs of our popular
MMBD101LT1, MMBD301LT1, and MMBD701LT1 SOT–23 devices. They are designed
for high–efficiency UHF and VHF detector applications. Readily available to many other
fast switching RF and digital applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
1
Anode
2
3
N/C Cathode
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Power Dissipation
T A = 25°C
Junction Temperature
Storage Temperature Range
MBD110DWT1
MBD330DWT1
MBD770DWT1
Symbol
Value
Unit
VR
7.0
Vdc
30
70
PF
120
mW
TJ
T stg
–55 to +125
°C
–55 to +150
°C
DEVICE MARKING
MBD110DWT1 = M4 MBD330DWT1 = T4 MBD770DWT1 = H5
Thermal Clad is a trademark of the Bergquist Company.
MBD110–1/5