M1MA151WKLT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Common Anode Silicon Dual Switching diodes

LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching diodes
These Common Cathode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SOT-23 package which is designed for low
power surface mount applications.
• Fast t rr , < 3.0 ns
• Low C D , < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2WKLT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WKLT3 to order the 13 inch/10,000 unit reel.
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
Device
Package
Shipping
M1MA151WKLT1G
M1MA152WKLT1G
M1MA151WKLT1
M1MA152WKLT1
SOT–23
SOT–23
SOT–23
SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
M1MA151WKLT1
M1MA152WKLT1
SOT-23 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
SOT-23
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol
Reverse Voltage
M1MA151WKLT1 V R
M1MA152WKLT1
Value
40
80
Unit
Vdc
ANODE
1
Peak Reverse Voltage
M1MA151WKLT1 V RM
40
Vdc
M1MA152WKLT1
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current
Single
Dual
I FM
225
mAdc
340
Peak Forward Surge Current Single
I (1)
FSM
500
mAdc
Dual
750
THERMAL CHARACTERISTICS
Rating
Symbo lMax
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
T stg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Symbol
Condition
Min
Reverse Voltage Leakage Current M1MA151WKLT1
IR
M1MA152WKLT1
Forward Voltage
VF
Reverse Breakdown Voltage
M1MA151WKLT1
VR
M1MA152WKLT1
V R = 35 V
—
V R = 75 V
—
I F = 100 mA
—
I R = 100 µA
40
80
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
CD
V R = 0, f = 1.0 MHz —
t (2)
rr
I F = 10 mA, V R = 6.0 V, —
R L = 100Ω, I rr = 0.1 I R
2. t rr Test Circuit
ANODE
2
3
CATHODE
Max
0.1
0.1
1.2
—
—
2.0
3.0
Unit
µAdc
Vdc
Vdc
pF
ns
M1MA151WKLT1-1/3