M1MA151WALT1 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Common Anode Silicon Dual Switching diodes

LESHAN RADIO COMPANY, LTD.
Common Anode Silicon
Dual Switching diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. These
devices are housed in the SOT-23 package which is designed for low
power surface mount applications.
• Fast t rr , < 10 ns
• Low C D , < 15 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2WALT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WALT3 to order the 13 inch/10,000 unit reel.
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
ORDERING INFORMATION
Device
Package
Shipping
M1MA151WALT1G
M1MA152WALT1G
M1MA151WALT1
M1MA151WALT1
SOT–23
SOT–23
SOT–23
SOT–23
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
M1MA151WALT1
M1MA152WALT1
SOT-23 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODES
40/80 V-100mA
SURFACE MOUNT
3
2
1
SOT-23
MAXIMUM RATINGS (T A = 25°C)
Rating
Symbol Value
Unit
ANODE
1
ANODE
2
Reverse Voltage
M1MA151WALT1 V R
40
Vdc
M1MA152WALT1
80
3
CATHODE
Peak Reverse Voltage
M1MA151WALT1 V RM
40
Vdc
M1MA152WALT1
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current
Single
Dual
I FM
225
mAdc
340
Peak Forward Surge Current Single
I (1)
FSM
500
mAdc
Dual
750
THERMAL CHARACTERISTICS
Rating
Symbo lMax
Unit
Power Dissipation
PD
200
mW
Junction Temperature
TJ
150
°C
Storage Temperature
T stg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current M1MA151WALT1
IR
M1MA152WALT1
Forward Voltage
VF
Reverse Breakdown Voltage
M1MA151WALT1
VR
M1MA152WALT1
V R = 35 V
—
0.1
µAdc
V R = 75 V
—
0.1
I F = 100 mA
—
1.2
Vdc
I R = 100 µA
40
—
Vdc
80
—
Diode Capacitance
Reverse Recovery Time
1. t = 1 SEC
CD
V R = 0, f = 1.0 MHz —
15
pF
t (2)
rr
I F = 10 mA, V R = 6.0 V, —
10
ns
R L = 100Ω, I rr = 0.1 I R
2. t rr Test Circuit
M1MA151WALT1-1/3