LUMG2NT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Dual NPN Digital Transistor

LESHAN RADIO COMPANY, LTD.
Dual NPN Digital Transistor
z Pb-Free Package is Available.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Ordering Information
LUMG2NT1G
S-LUMG2NT1G
Device
LUMG2NT1G
S-LUMG2NT1G
LUMG2NT3G
S-LUMG2NT3G
Marking
G2
G2
Shipping
3000/Tape&Reel
10000/Tape&Reel
ABSOLUTE MAXIMUM RATINGS (T_A = 25°C)
Rating
Symbol
Value
Supply voltage
V _CC
Input voltage
V _IN
Output current
I_O
Output current
I _C(Max.)
Power dissipation
P_D
Junction temperature
T_J
Storage Temperature
T_stg
∗ ^{120mW per element must not be exceeded.}
50
-10 to +40
30
100
150
150
–55 to +150
Unit
Vdc
Vdc
mAdc
mAdc
mW ^∗
°C
°C
SC-88A
R1
DTr2
(3)
R2
(2)
R2
(1) _R1=47kΩ
R1 R2=47kΩ
DTr1
(4)
(5)
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Input voltage
Input voltage
Output voltage
Input current
Output current
DC current gain
Resistance ratio
Transition frequency
Input resistance
∗ ^{Transition frequency of the device}
V I(off)
−
− 0.5 V VCC=5 V, I _O=100 µA
V I(on) 3
− − V VO= 0.3 V, I O=2 mA
V O(on) − 0.1 0.3 V IO=10 mA,II =0.5mA
II
− − 0.18 mA VI =5V
IO(off)
−
− 0.5 µA VCC=50 V, VI=0 V
GI
68 − − V VO= 5 V, I O=5 mA
R₂ /R₁ 0.8 1 1.2 −
−
fT
− 250 − MHz VCE=10V, IE= −5mA, f=100MHz
∗
R1 32.9 47 61.1 kΩ
−
Rev.O 1/3