LSI1012XT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – N-Channel 1.8-V (G-S) MOSFET

LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
LSI1012XT1G
S-LSI1012XT1G
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 10 ns
D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
Marking
Shipping
LSI1012XT1G
A
3000/Tape&Reel
S-LSI1012XT1G
LSI1012XT3G
S-LSI1012XT3G
A
10000/Tape&Reel
SC-89
Gate 1
3 Drain
Source 2
(Top View)
MARKING DIAGRAM
3
A
1
2
A = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^b
Pulsed Drain Current^a
Continuous Source Current (diode conduction)^b
Maximum Power Dissipation^b for SC-75
Maximum Power Dissipation^b for SC-89
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
ESD
20
"6
600
500
400
350
1000
275
250
175
150
90
80
275
250
160
140
−55 to 150
2000
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Unit
V
mA
mW
_C
V
Rev .O 1/6