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LSI1012LT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – N-Channel 1.8-V (G-S) MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
N-Channel 1.8-V (G-S) MOSFET
FEATURES
D TrenchFETr Power MOSFET: 1.8-V Rated
D Gate-Source ESD Protected: 2000 V
D High-Side Switching
D Low On-Resistance: 0.7 W
D Low Threshold: 0.8 V (typ)
D Fast Switching Speed: 10 ns
D S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
BENEFITS
D Ease in Driving Switches
D Low Offset (Error) Voltage
D Low-Voltage Operation
D High-Speed Circuits
D Low Battery Voltage Operation
LSI1012LT1G
S-LSI1012LT1G
3
1
2
SOT-23
Gate 1
3 Drain
APPLICATIONS
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems
D Power Supply Converter Circuits
D Load/Power Switching Cell Phones, Pagers
ORDERING INFORMATION
Device
LSI1012LT1G
S-LSI1012LT1G
LSI1012LT3G
S-LSI1012LT3G
Marking
Shipping
A2 3000/Tape&Reel
A2 10000/Tape&Reel
Source 2
(Top View)
MARKING DIAGRAM
3
A2
1
2
A2 = Specific Device Code
M = Month Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Currenta
Continuous Source Current (diode conduction)b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
ESD
20
"6
600
500
400
350
1000
275
250
225
â55 to 150
2000
Notes
d. Pulse width limited by maximum junction temperature.
e. Surface Mounted on FR4 Board.
Unit
V
mA
mW
_C
V
Rev .O 1/6
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