LRX102UT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – EPITAXIAL PLANAR NPN/PNP TRANSISTOR

LESHAN RADIO COMPANY, LTD.
EPITAXIAL PLANAR
NPN/PNP TRANSISTOR
LRX102UT1G
S-LRX102UT1G
Features
z Including two devices in USV.
(UltraSuperminitypewith5leads.)
z With Built-in bias resistors.
z Simplify circuit design.
z Reduce a quantity of parts and manufacturing process.
SC−88A/SOT−353
z We declare that the material of product
compliance with RoHS requirements.
z S- Prefix for Automotive and Other Applications Requiring Unique Site
EQUIVALENT CIRCUIT (TOP VIEW)
5
4
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
EQUIVALENT CIRCUIT
Q1
Q2
Q₁
OUT
R1
IN
R2
COMMON
Q₂
R1
IN
OUT
Q₁
R1=47KΩ
R2=47KΩ
R2
COMMON
Q₂
R1=10KΩ
R2=47KΩ
1
2
3
ORDERING INFORMATION
Device
Marking
Shipping
LRX102UT1G
LRX102UT3G
BM
3000 Tape & Reel
BM
10000 Tape & Reel
Q1 MAXIMUM RATING (Ta=25°C)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
SYMBOL
V_O
V_I
I_O
RATING
50
40, -10
100
UNIT
V
V
Q2 MAXIMUM RATING (Ta=25°C)
CHARACTERISTIC
Output Voltage
Input Voltage
Output Current
Q1 Q2 MAXIMUM RATING (Ta=25°C)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
* Total Raing.
SYMBOL
V_O
V_I
I_O
SYMBOL
P_D *
T_j
T_stg
RATING
-50
-30, 6
-100
RATING
200
150
-55 150
UNIT
V
V
UNIT
Rev.O 1/4