LRB751G-40T1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – Schottky barrier diode General rectification

LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB751G-40T1G
zApplications
General rectification
zFeatures
1) Small power mold type.
(SO D-723)
2) Low VF
3) High reliability
4) Pb-Free package is available
zConstruction
Silicon epitaxial planar
LRB751G-40T1G
1
2
SOD-723
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Reverse voltage (repetitive peak)
V_RM
40
V
Reverse voltage (DC)
V_R
30
V
Average rectified forward current
Io
30
mA
Forward current surge peak （60Hz・1cyc）
I_FSM
200
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40 to +125
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol Min. Typ. Max.
V_F
-
-
0.37
I_R
-
-
0.5
Ct
-
2
-
Unit
Conditions
V
I_F=1mA
µA
V_R=30V
pF
V_R=1V , f=1MHz
zDEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LRB751G-40T1G
5
4000/Tape&Reel
Rev.O 1/4