LRB425LT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – Schottky barrier diode Low power rectification

LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
!Applications
Low power rectification
!Features
1) Small surface mounting type. (SMD3)
2) Low VF. (VF=0.45V Typ. at 100mA)
3) High reliability.
4) We declare that material of product compliance
with ROHS requirements.
!Construction
Silicon epitaxial planar
LRB425LT1G
3
1
2
SOT-23
3
1
2
! DEVICE MARKING AND ORDERING INFORMATION
Device
LRB425LT1G
Marking
D3L
Shipping
3000/Tape&Reel
LRB425LT3G
D3L
10000/Tape&Reel
!Absolute maximum ratings (Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Mean rectifying current
Peak forward surge curren^∗
Junction temperature
Storage temperature
Symbol
VRM
VR
IO
IFSM
Tj
Tstg
Limits
Unit
40
V
40
V
0.1
A
1
A
125
°C
−40~+125
°C
∗ 60Hz for 1
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
VF1
−
−
0.55
V
IF=100mA
Forward voltage
VF2
−
−
0.34
V
IF=10mA
Reverse current
IR
−
−
30
µA VR=10V
Capacitance between terminals
CT
−
6.0
−
pF VR=10V, f=1MHz
Note) ESD sensitive product handling required.
Rev.O 1/3