LRB411DLT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Schottky barrier diode

LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB411DLT1G
zApplications
Low current rectification
zFeatures
1) Small mold type. (SOT-23)
2) Low IR
3) High reliability.
4) S- Prefix for Automotive and O ther Applications Req uiring
Uniq ue Site and Control Change Req uirements;
AEC-Q 101 Q ualified and PPAP Capable.
zConstruction
Silicon epitaxial planar
z _{We declare that the material of product}
compliance with RoHS requirements.
zAbsolute maximum ratings (Ta = 25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward current（*1）
Forward current s urge peak （60Hz・1cyc）（*1）
Junction tem perature
Storage tem perature
(*1) Rating of per diode
Sym bol
V_RM
V_R
Io
I_FSM
Tj
Ts tg
Lim its
40
20
500
3
125
-40 to +125
LRB411DLT1G
S-LRB411DLT1G
3
1
2
SOT– 23
3
CATHODE
1
ANODE
Unit
V
V
mA
A
℃
℃
zElectrical characteristics (Ta = 25°C)
Param eter
Forwarad voltage
Revers e current
Capacitance between term inal
Sym bol Min. Typ. Max.
V_F1
-
-
0.50
V_F2
-
-
0.30
I_R1
-
-
30
Ct1
-
20
-
Unit
C o n d itio n s
V
I_F=500m A
V
I_F=10m A
µA
V_R =1 0 V
pF
V_R=10V , f=1MHz
z Device marking and ordering information
Device
Marking
LRB411DLT1G
D3E
S-LRB411DLT1G
LRB411DLT3G
D3E
S-LRB411DLT3G
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/4