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LRB411DLT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – Schottky barrier diode Low current rectification | |||
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LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB411DLT1G
zApplications
Low current rectification
LRB411DLT1G
3
zFeatures
1) Small mold type. (SOT-23)
2) Low IR
3) High reliability.
zConstruction
Silicon epitaxial planar
z We declare that the material of product
compliance with RoHS requirements.
zAbsolute maximum ratings (Ta = 25°C)
Param eter
Revers e voltage (repetitive peak)
Revers e voltage (DC)
Average rectified forward currentï¼*1ï¼
Forward current s urge peak ï¼60Hzã»1cycï¼ï¼*1ï¼
Junction tem perature
Storage tem perature
(*1) Rating of per diode
Sym bol
VRM
VR
Io
IFSM
Tj
Ts tg
Lim its
40
20
500
3
125
-40 to +125
zElectrical characteristics (Ta = 25°C)
Param eter
Forwarad voltage
Revers e current
Capacitance between term inal
Sym bol Min. Typ. Max.
VF1
-
-
0.50
VF2
-
-
0.30
IR1
-
-
30
Ct1
-
20
-
1
2
SOTâ 23
3
CATHODE
1
ANODE
Unit
V
V
mA
A
â
â
Unit
C o n d itio n s
V
IF=500m A
V
IF=10m A
µA
VR =1 0 V
pF
VR=10V , f=1MHz
z Device marking and ordering information
Device
Marking
LRB411DLT1G
D3E
LRB411DLT3G
D3E
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rev.O 1/4
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