LP2307LT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – 16V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
16V P-Channel Enhancement-Mode MOSFET
VDS= -16V
RDS(ON), Vgs@-4.5V, Ids@-4.7A = 70 mΩ
RDS(ON), Vgs@-2.5V, Ids@-1.0A = 110 mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LP2307LT1G
S-LP2307LT1G
LP2307LT3G
S-LP2307LT3G
Marking
P07
P07
Shipping
3000/Tape&Reel
10000/Tape&Reel
Absolute Maximum Ratings
Symbol
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
P_D@T _A=70℃
T_STG
T_J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current¹
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
LP2307LT1G
S-LP2307LT1G
3
1
2
SOT– 23 (TO–236AB)
3_D
G
1
S
2
Rating
-16
±8
-4.7
-3.3
-20
1.1
0.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Value
110
Unit
℃/W
Rev .O 1/4