LP2301ALT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 20V P-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦110mΩ@VGS=-4.5V
● RDS(ON) ≦150mΩ@VGS=-2.5V
● Super high density cell design for extremely low RDS(ON)
● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
● ^{We declare that the material of product are Halogen Free and}
compliance with RoHS requirements.
Ordering Information
Device
LP2301ALT1G
S-LP2301ALT1G
LP2301ALT3G
S-LP2301ALT3G
Marking
01A
01A
Shipping
3000/Tape& Reel
10000/Tape& Reel
LP2301ALT1G
S-LP2301ALT1G
3
1
2
SOT– 23
3
1
2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(Tj=150℃)*
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Thermal Resistance-Junction to Ambient*
Symbol
VDSS
VGSS
ID
IDM
PD
TJ
Tstg
RθJA
Limit
-20
±8
-2.0
-1.6
-10
0.7
0.45
-55 to 150
-55 to 150
Typical
Maximum
100
175
e * The device mounted on 1in² FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃
℃/W
Rev .O 1/5