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| LN4812LT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – 30V N-Channel Enhancement-Mode MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@6 A = 38mâ¦
RDS(ON), Vgs@4.5V, Ids@5A = 52mâ¦
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
High Power and Current Handling Capability
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
â¼ Simple Drive Requirement
â¼ Small Package Outline
â¼ Surface Mount Device
Ordering Information
Device
LN4812LT1G
S-LN4812LT1G
LN4812LT3G
S-LN4812LT3G
Marking
N48
N48
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN4812LT1G
S-LN4812LT1G
3
1
2
SOTâ 23 (TOâ236AB)
N - Channel
3
1
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS
Drain-Source Voltage
30
VGS
Gate-Source Voltage
± 20
ID
Continuous Drain Current
IDM
Pulsed Drain Current 1)
PD
Maximum Power Dissipation
6
30
TA = 25oC
1.4
TA = 75oC
0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
-55 to 150
RθJC
Junction-to-Case Thermal Resistance
50
RθJA
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
90
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing
Unit
V
A
W
oC
oC/W
Rev .O 1/4
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