LN2502LT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – 20V N-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
V_DS= 20V
R_DS(ON), V_gs@2.5V, I_ds@5.2A = 50mΩ
R_DS(ON), V_gs@4.5V, I_ds@6A = 40mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
Ordering Information
Device
LN2502LT1G
S-LN2502LT1G
LN2502LT3G
S-LN2502LT3G
Marking
N25
N25
Shipping
3000/Tape& Reel
10000/Tape& Reel
LN2502LT1G
S-LN2502LT1G
3
1
2
SOT– 23 (TO–236AB)
3D
G
1
S
2
Maximum Ratings and Thermal Characteristics (T_A = 25^oC unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ¹⁾
Operating Junction and Storage Temperature Range
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
Symbol
V_DS
V_GS
I_D
I_DM
T_J, T_stg
Limit
20
± 12
4.2
33
-55 to 150
Unit
V
A
o_C
Rev .A 1/3