LN2312LT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 20V N-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
VDS= 20V
RDS(ON), Vgs@4.5V, Ids@5.0A = 41mȤ

RDS(ON), Vgs@2.5V, Ids@4.5A = 47mȤ

Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
we declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Q
ualified and PPAP Capable.
▼ Capable of 2.5V gate drive
▼ Lower on-resistance
▼ Surface mount package
Ordering Information
Device
LN2312LT1G
S-LN2312LT1G
LN2312LT3G
S-LN2312LT3G
Marking
N12
N12
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN2312LT1G
S-LN2312LT1G
3
1
2
SOT– 23 (TO–236AB)
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
20
±8
4.9
3.4
15
0.75
1.3
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
140
Unit
℃/W
Rev .O 1/5