LN2308LT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 60V N-Channel Enhancement-Mode MOSFET

LESHAN RADIO COMPANY, LTD.
60V N-Channel Enhancement-Mode MOSFET
FEATURES
● RDS(ON) ≦100mΩ@VGS=10V
● RDS(ON) ≦130mΩ@VGS=4.5V
● Super high density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current
capability
● Capable doing Cu wire bonding
● S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● Load Switch
● DSC
Ordering Information
Device
LN2308LT1G
S-LN2308LT1G
LN2308LT3G
S-LN2308LT3G
Marking
N08
N08
Shipping
3000/Tape& Reel
10000/Tape& Reel
LN2308LT1G
S-LN2308LT1G
3
1
2
SOT– 23
3
1
2
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDSS
60
Gate-Source Voltage
VGSS
±20
Continuous Drain
TA=25℃
2.6
ID
Current(tJ=150℃)
TA=70℃
1.8
Pulsed Drain Current
IDM
8
Maximum Body-Diode Continuous Current
IS
1.6
TA=25℃
Maximum Power Dissipation
PD
TA=70℃
0.7
0.45
Operating Junction Temperature
TJ
150
Maximum Junction-to-Ambient
T≦10 sec
150
RthJA
Steady State
175
Thermal Resistance-Junction to Case
RθJC
120
*The device mounted on 1in² FR4 board with 2 oz copper
Unit
V
V
A
A
W
℃
℃/W
℃/W
Rev.O 1/5