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| LN2306LT1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – 30V N-Channel Enhancement-Mode MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V
RDS(ON), Vgs@10V, Ids@5.8A = 38mâ¦
RDS(ON), Vgs@4.5V, Ids@5.0A = 43mâ¦
RDS(ON), Vgs@2.5V, Ids@4.0A = 62mâ¦
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Halogen Free
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LN2306LT1G
S-LN2306LT1G
LN2306LT3G
S-LN2306LT3G
Marking
N06
N06
Shipping
3000/Tape&Reel
10000/Tape&Reel
LN2306LT1G
S-LN2306LT1G
3
1
2
SOTâ 23 (TOâ236AB)
3D
G
1
S
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current 1)
Operating Junction and Storage Temperature Range
VDS
VGS
ID
IDM
TJ, Tstg
30
± 12
5.8
30
-55 to 150
Total Power Dissipation
PD
1.4
Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
RθJA
140
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
Unit
V
A
oC
W
oC/W
Rev .A 1/4
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