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LN2302ALT1G_15 Datasheet, PDF (1/5 Pages) Leshan Radio Company – 20V N-Channel Enhancement-Mode MOSFET | |||
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LESHAN RADIO COMPANY, LTD.
20V N-Channel Enhancement-Mode MOSFET
FEATURES
â RDS(ON)â¦85mâ¦@VGS=4.5V
â RDS(ON)â¦115mâ¦@VGS=2.5V
â RDS(ON)â¦135mâ¦@VGS=1.8V
â Super high density cell design for extremely low RDS(ON)
â Exceptional on-resistance and maximum DC current
capability
â S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
APPLICATIONS
â Power Management in Notebook
â Portable Equipment
â Load Switch
â DSC
Ordering Information
Device
LN2302ALT1G
S-LN2302ALT1G
LN2302ALT3G
S-LN2302ALT3G
Marking
02A
02A
Shipping
3000/Tape& Reel
10000/Tape& Reel
LN2302ALT1G
S-LN2302ALT1G
3
1
2
SOTâ 23
3
1
2
Absolute Maximum Ratings (TA=25â Unless Otherwise Noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
±8
Continuous Drain
TA=25â
2.8
ID
Current(tJ=150â)
TA=70â
2.2
Pulsed Drain Current
IDM
10
Maximum Body-Diode Continuous Current
IS
1.6
TA=25â
1.25
Maximum Power Dissipation
PD
TA=70â
0.8
Operating Junction Temperature
TJ
150
Maximum Junction-to-Ambient
Tâ¦10 sec
77
RthJA
Steady State
105
Thermal Resistance-Junction to Case
RθJC
70
*The device mounted on 1in2 FR4 board with 2 oz copper
Unit
V
V
A
A
W
â
â/W
â/W
Rev .O 1/5
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