LMUN5241T1G_15 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network con-
sisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
•S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMUN5241T1G
S-LMUN5241T1G
3
1
2
SC-70 / SOT-323
PIN 1
R
1
BASE
(INPUT)
R₂
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
ORDERING INFORMATION
Device
LMUN5241T1G
S-LMUN5241T1G
Marking
8U
Shipping
3000/Tape&Reel
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Total Device Dissipation
P_D
T_A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
R_θJA
R_θJL
T_J, T_stg
Max
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
618 (Note 1.)
403 (Note 2.)
280 (Note 1.)
332 (Note 2.)
–55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C
Rev.O 1/4