LMUN5211T1G_15 Datasheet, PDF (1/10 Pages) Leshan Radio Company – Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network con-
sisting of two resistors; a series base resistor and a base–emitter resistor.
The BRT eliminates these individual components by integrating them into a
single device. The use of a BRT can reduce both system cost and board
space. The device is housed in the SC–70/SOT–323 package which is
designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC–70/SOT–323 package can be soldered using wave or
reflow. The modified gull–winged leads absorb thermal stress
during soldering eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
• Pb-Free package is available
•S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMUN5211T1G
Series
S-LMUN5211T1G
Series
3
1
2
SC-70 / SOT-323
PIN 1
R₁
BASE
(INPUT)
R₂
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAM
8X M
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page 2
of this data sheet.
8x = Specific Device Code
x = (See Marking Table)
M= Date Code
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
202 (Note 1.)
310 (Note 2.)
1.6 (Note 1.)
2.5 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R_θJA
618 (Note 1.)
403 (Note 2.)
Thermal Resistance –
Junction-to-Lead
R_θJL
280 (Note 1.)
332 (Note 2.)
Junction and Storage
Temperature Range
T_J, T_stg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
°C/W
°C
Rev.O 1/10