LMUN5111DW1T1G_15 Datasheet, PDF (1/19 Pages) Leshan Radio Company – Dual Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor. These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5111DW1T1G series, two BRT devices are housed in the SOT–363 package which
is ideal for low–power surface mount applications where board space is at a premium.
. Simplifies Circuit Design
. Reduces Board Space
. Reduces Component Count
. Available in 8 mm, 7 inch/3000 Unit Tape and Reel
. We declare that the material of product compliance with RoHS requirements.
.S - Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMUN5111DW1T1G
Series
S-LMUN5111DW1T1G
Series
6
5
4
1
2
3
SC-88/SOT-363
Ordering Information
Device
LMUN5111DW1T1G Series
S-LMUN5111DW1T1G Series
LMUN5111DW1T3G Series
S-LMUN5111DW1T3G Series
Package
SC-88
SC-88
SC-88
SC-88
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Symbol Value Unit
Collector-Base Voltage
V _CBO –50 Vdc
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
V _CEO
I_C
–50 Vdc
–100 mAdc
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T _A = 25°C
Derate above 25°C
P_D
187 (Note 1.) mW
256 (Note 2.)
1.5 (Note 1.) mW/°C
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R _θJA
670 (Note 1.)
490 (Note 2.)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Total Device Dissipation
T _A = 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
P_D
R _θJA
R _θJL
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
493 (Note 1.)
325 (Note 2.)
188 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature
T _J , T _stg
–55 to +150
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
mW
mW/°C
°C/W
°C/W
°C
6
5
4
Q₂
R1 _R2
R2
Q₁
R1
1
2
3
MARKING DIAGRAM
6
5
4
XX
1
2
3
xx = Device Marking
= (See Page 2)
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
Rev.A 1/19