LMUN2237LT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
ESD Rating –
PIN 2
R₁
BASE
(INPUT)
R₂
LMUN2237LT1
CASE 318–08, STYLE 6
SOT– 23 (TO–236AB)
PIN 3
COLLECTOR
(OUTPUT)
PIN 1
EMITTER
(GROUND)
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
Thermal Resistance –
Junction-to-Ambient
R_θJA
540 (Note 1)
370 (Note 2)
Thermal Resistance –
Junction-to-Lead
R_θJL
264 (Note 1)
287 (Note 2)
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
T_J, T_stg –55 to +150
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
LMUN2237LT1-1/4