LMUN2135LT1 Datasheet, PDF (1/4 Pages) Leshan Radio Company – Bias Resistor Transistors, PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Pb-Free Package is Available.
LMUN2135LT1
3
1
2
SOT-23 (TO-236AB)
PIN 1
R₁
BASE
(INPUT)
R₂
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
Thermal Resistance –
Junction-to-Ambient
R_θJA
540 (Note 1)
370 (Note 2)
Thermal Resistance –
Junction-to-Lead
R_θJL
264 (Note 1)
287 (Note 2)
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
T_J, T_stg –55 to +150
ORDERING INFORMATION
Device
LMUN2135LT1
LMUN2135LT1G
Marking
A6M
A6M (Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
LMUN2135LT1-1/4