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LMUN2134LT1G_15 Datasheet, PDF (1/8 Pages) Leshan Radio Company – Bias Resistor Transistors | |||
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LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
LMUN2111LT1G
SERIES
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
⢠Simplifies Circuit Design
⢠Reduces Board Space
⢠Reduces Component Count
⢠The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
⢠Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace âT1â with âT3â in the
Device Number to order the 13 inch/10,000 unit reel.
⢠We declare that the material of product compliance with RoHS requirements.
3
1
2
SOT-23
PIN 1
R1
BASE
(INPUT)
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
VCBO
50
Collector-Emitter Voltage
VCEO
50
Collector Current
IC
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Thermal Resistance â
Junction-to-Ambient
RθJA
508 (Note 1.)
311 (Note 2.)
Thermal Resistance â
Junction-to-Lead
RθJL
174 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature Range
TJ, Tstg
â55 to +150
1. FRâ4 @ Minimum Pad
2. FRâ4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
1/8
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