LMUN2132LT1G_15 Datasheet, PDF (1/8 Pages) Leshan Radio Company – Bias Resistor Transistors

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
LMUN2111LT1G
SERIES
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
• ^{We declare that the material of product} compliance with RoHS requirements.
3
1
2
SOT-23
PIN 1
R₁
BASE
(INPUT)
R₂
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R_θJA
508 (Note 1.)
311 (Note 2.)
Thermal Resistance –
Junction-to-Lead
R_θJL
174 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature Range
T_J, T_stg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
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