LMUN2110LT1G_15 Datasheet, PDF (1/16 Pages) Leshan Radio Company –
PNP Silicon Surface Mount Transistors

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
LMUN2110LT1G
Series
S-LMUN2110LT1G
Series
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the SOT-23
package which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SOT-23 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the
Device Number to order the 13 inch/10,000 unit reel.
• ^{We declare that the material of product} compliance with RoHS requirements.
• _{S- Prefix for Automotive and Other Applications Requiring Unique}
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable
3
1
2
SOT-23
PIN 1
R₁
BASE
(INPUT)
R₂
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T_A = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector-Base Voltage
V_CBO
50
Collector-Emitter Voltage
V_CEO
50
Collector Current
I_C
100
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Total Device Dissipation
T_A = 25°C
Derate above 25°C
P_D
246 (Note 1.)
400 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
Thermal Resistance –
Junction-to-Ambient
R_θJA
508 (Note 1.)
311 (Note 2.)
Thermal Resistance –
Junction-to-Lead
R_θJL
174 (Note 1.)
208 (Note 2.)
Junction and Storage
Temperature Range
T_J, T_stg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Unit
Vdc
Vdc
mAdc
Unit
mW
°C/W
°C/W
°C/W
°C
Rev.O 1/16