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| LMSD1819A-RT1G Datasheet, PDF (1/4 Pages) Leshan Radio Company – General Purpose Amplifier Transistor | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Amplifier
Transistor
NPN Silicon Surface Mount
This NPN Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC-70/SOT-323 package which is designed for low power surface
mount applications.
Features
⢠High hFE, 210â460
⢠Low VCE(sat), < 0.5 V
⢠Moisture Sensitivity Level 1
⢠ESD Protection: Human Body Model > 4000 V
Machine Model > 400 V
⢠We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V(BR)CBO
60
Vdc
Collector-Emitter Voltage
V(BR)CEO
50
Vdc
Emitter-Base Voltage
V(BR)EBO
7.0
Vdc
Collector Current â Continuous
IC
100
mAdc
Collector Current â Peak
IC(P)
200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
â55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
LMSD1819A-RT1G
3
1
2
SC-70/SOTâ323
1
BASE
3
COLLECTOR
2
EMITTER
Ordering Information
Device
LMSD1819A-RT1G
Marking
ZR
LMSD1819A-RT1G
ZR
Shipping
3000/Tape&Reel
10000/Tape&Reel
1/4
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