LMSD103BT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – SCHOTTKY BARRIER SWITCHING DIODE

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER SWITCHING DIODE
Features
· Low Forward Voltage Drop
· Guard Ring Construction for
Transient Protection
· Negligible Reverse Recovery Time
· Low Reverse Capacitance
· Also Available in Lead Free Version
· S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable.
Mechanical Data
· ^{Case: SOD-123, Plastic}
· Case material - UL Flammability Rating
Classification 94V-0
· ^{Moisture sensitivity: Level 1 per J-STD-020A}
· Polarity: Cathode Band
· Leads: Solderable per MIL-STD-202,
Method 208
· Also Available in Lead Free Plating
(Matte Tin Finish). Please See
Ordering Information, Note 4, on Page 2
· Marking: Type Code only or Date Code and
Type Code
· Type Codes: LMSD103AT1G S4
LMSD103BT1G S5
LMSD103CT1G S6
· Weight: 0.01 grams (approx.)
Maximum Ratings ^{@ T}A ^{= 25°C unless otherwise specified}
LMSD103*T1G
S-LMSD103*T1G
1
2
SOD-123
Equivalent Circuit Diagram
1
Cathode
2
Anode
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current @ t £ 1.0s
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Symbol LMSD103AT1G LMSD103BT1G LMSD103CT1G Unit
VRRM
VRWM
40
30
20
V
VR
VR(RMS)
28
21
14
V
IFM
350
mA
I_FSM
1.5
A
Pd
400
mW
RqJA
300
°C/W
Tj, TSTG
-65 to +125
°C
Electrical Characteristics ^{@ TA = 25°C unless otherwise specified}
Characteristic
Symbol Min
Typ
Max
Unit
Reverse Breakdown Voltage (Note 2) LMSD103AT1G
40
LMSD103BT1G V(BR)R
30
¾
¾
V
LMSD103CT1G
20
Forward Voltage Drop (Note 2)
V_FM
¾
¾
0.37
0.60
V
Peak Reverse Current (Note 2)
LMSD103AT1G
LMSD103BT1G IRM
¾
LMSD103CT1G
¾
5.0
mA
Total Capacitance
CT
¾
28
¾
pF
Reverse Recovery Time
trr
¾
10
¾
ns
Notes: 1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
2. Short duration test pulse used to minimize self-heating effect.
Test Condition
IR = 100mA
IF = 20mA
IF = 200mA
V_R = 30V
V_R = 20V
V_R = 10V
V_R = 0V, f = 1.0MHz
I_F = I_R = 200mA,
Irr = 0.1 x IR, RL = 100W
Rev.O 1/3