LMBTH10QLT1G Datasheet, PDF (1/5 Pages) Leshan Radio Company – VHF/UHF Transistors

LESHAN RADIO COMPANY, LTD.
VHF/UHF Transistors
z We declare that the material of product ^{compliance with RoHS requirements.}
Ordering Information
Device
LMBTH10QLT1G
LMBTH10QLT3G
Marking
3EQ
3EQ
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBTH10QLT1G
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
V _CEO
V _CBO
V _EBO
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
Unit
25
Vdc
30
Vdc
3.0
Vdc
Symbol
P_D
R_θJA
P_D
R_θJA
T_J , T_stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBTH10LT1G = 3EQ
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 1.0 mAdc, I _B= 0 )
Collector–Base Breakdown Voltage
(I _C = 100 µAdc , I _E = 0)
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc , I _C= 0)
Collector Cutoff Current
( V _CB = 25Vdc , I _E = 0 )
Collector Cutoff Current
( V _CB = 30Vdc , I _E = 0 )
Emitter Cutoff Current
( V _EB = 2.0Vdc , I _C= 0 )
Emitter Cutoff Current
( V _EB = 3.0Vdc , I _C= 0 )
V _(BR)CEO
V _(BR)CBO
V _(BR)EBO
I _CBO
I _CBO
I _EBO
I _EBO
25
30
3.0
—
—
—
—
—
—
Vdc
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
100
uAdc
—
100
nAdc
—
10
uAdc
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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