LMBTA64LT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – Darlington Transistors

Darlington Transistors
PNP Silicon
LESHAN RADIO COMPANY, LTD.
We declare that the material of product
compliance with RoHS requirements.
LMBTA63LT1G
LMBTA64LT1G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
DEVICE MARKING
VCES
VCBO
VEBO
IC
–30
–30
–10
–500
Vdc
Vdc
Vdc
mAdc
LMBTA63LT1G = 2U; LMBTA64LT1G = 2V
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,(1)
TA = 25°C
Derate above 25°C
Symbol
PD
Max
Unit
225
mW
1.8
mW/°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
R_qJA
PD
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R_qJA
TJ, Tstg
417
–55 to +150
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –100 µAdc)
Collector Cutoff Current (VCB = –30 Vdc)
Emitter Cutoff Current (VEB = –10 Vdc)
ON CHARACTERISTICS
DC Current Gain(3)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –10 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
(IC = –100 mAdc, VCE = –5.0 Vdc)
LMBTA63LT1G
LMBTA64LT1G
LMBTA63LT1G
LMBTA64LT1G
Collector–Emitter Saturation Voltage (IC = –100 mAdc, IB = –0.1 mAdc)
Base–Emitter On Voltage (IC = –100 mAdc, VCE = –5.0 Vdc)
SMALL–SIGNAL CHARACTERISTICS
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Current–Gain – Bandwidth Product (IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)
fT
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
COLLECTOR 3
BASE
1
EMITTER 2
Min
Max
Unit
–30
–
Vdc
–
–100
nAdc
–
–100
nAdc
–
5,000
–
10,000
–
10,000
–
20,000
–
–
–1.5
Vdc
–
–2.0
Vdc
125
–
MHz
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