LMBTA44LT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – LMBTA44LT1G

LESHAN RADIO COMPANY, LTD.
LMBTA44LT1G
NPN EPITAXIAL PLANAR TRANSISTOR
LMBTA44LT1G
S-LMBTA44LT1G
We declare that the material of product
compliance with RoHS requirements.
Description
The LMBTA44LT1G is designed for application
that requires high voltage.
Features
• High Breakdown Voltage: VCEO=400(Min.) at IC=1mA
• Complementary to LMBTA94LT1G
• S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
DEVICE MARKING
LMBTA44LT1G = 3D
S-LMBTA44LT1G = 3D
3
1
2
SOT– 23
COLLECTOR
3
1
BASE
Absolute Maximum Ratings
2
EMITTER
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 350 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ...................................................................................... 400 V
VCEO Collector to Emitter Voltage ................................................................................... 400 V
VEBO Emitter to Base Voltage ............................................................................................. 5 V
IC Collector Current ...................................................................................................... 200 mA
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
400
V
Collector-emitter breakdown voltage V(BR)CEO
IC= 1mA , IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100µA, IC=0
5
V
Collector cut-off current
ICBO
VCB=400V, IE=0
0.1
µA
Collector cut-off current
ICEO
VCE=350V
5
µA
Emitter cut-off current
IEBO
VEB= 4V, IC=0
0.1
µA
HFE(1)
VCE=10V, IC=10 mA
80
300
DC current gain
HFE(2)
VCE=10V, IC=1mA
50
HFE(3)
VCE=10V, IC=50 mA
40
Collector-emitter saturation voltage
VCE(sat)
VCE(sat)
IC=10 mA, IB=1mA
IC=50 mA, IB=5mA
0.2
V
0.3
V
Base-emitter sataration voltage
Transition frequency
VBE(sat)
IC=10 mA, IB= 1 mA
fT
VCE=10V, IC=20mA
50
0.9
V
MHz
Rev.O 1/3