LMBT918LT1G_15 Datasheet, PDF (1/3 Pages) Leshan Radio Company – VHF / UFH Transistor

VHF / UFH Transistor
NPN Silicon
LESHAN RADIO COMPANY, LTD.
z We declare that the material of product compliance with RoHS requirements.
Ordering Information
LMBT918LT1G
S-LMBT918LT1G
Device
LMBT918LT1G
S-LMBT918LT1G
LMBT918LT3G
S-LMBT918LT3G
Marking
M3B
M3B
Shipping
3000/Tape&Reel
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
V _CEO
V _CBO
V _EBO
I_C
Value
15
30
3.0
50
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T_A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
Max
Unit
P_D
225
mW
R_θJA
P_D
R_θJA
T_J , T_stg
556
°C/W
300
mW
2.4
mW/°C
417
–55 to +150
°C/W
°C
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT9181LT1G = M3B
ELECTRICAL CHARACTERISTICS (T_A = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I _C = 3.0 mAdc, I _B = 0)
Collector–Base Breakdown Voltage
(I _C = 1.0 µAdc, I _E = 0)
Emitter–Base Breakdown Voltage
(I _E = 10 µAdc, I _C = 0)
Collector Cutoff Current
( V _CB = 15 Vdc, I _E = 0)
V _(BR)CEO
15
V _(BR)CBO
30
V _(BR)EBO
3.0
I _CBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Max
Unit
—
Vdc
—
Vdc
—
Vdc
50
nAdc
Rev.O 1/3