LMBT6520LT1G_15 Datasheet, PDF (1/6 Pages) Leshan Radio Company – High Voltage Transistor

LESHAN RADIO COMPANY, LTD.
High Voltage Transistor
PNP Silicon
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Ordering Information
Device
LMBT6520LT1G
S-LMBT6520LT1G
LMBT6520LT3G
S-LMBT6520LT3G
MAXIMUM RATINGS
Marking
2Z
2Z
Shipping
3000/Tape&Reel
10000/Tape&Reel
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Base Current
IB
Collector Current — Continuous I C
Value
–350
–350
–5.0
–250
–500
Unit
Vdc
Vdc
Vdc
mA
mAdc
LMBT6520LT1G
S-LMBT6520LT1G
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
(S-)LMBT6520LT1G = 2Z
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (I C = –1.0 mA )
Collector–Base Breakdown Voltage(I E = –100 µA )
Emitter–Base Breakdown Voltage(I E = –10 µA)
Collector Cutoff Current( V CB = –250V )
Emitter Cutoff Current( V EB = –4.0V )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I CBO
I _EBO
Min
–350
–350
–5.0
—
—
Max
Unit
—
Vdc
—
Vdc
—
Vdc
–50
nA
–50
nA
Rev.O 1/6