LMBT5551LT1G_11 Datasheet, PDF (1/5 Pages) Leshan Radio Company – High Voltage Transistors RoHS requirements.

LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
FEATURE
ƽ We declare that the material of product
compliance with RoHS requirements.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LMBT5550LT1G
M1F
3000/Tape&Reel
LMBT5550LT3G
M1F
10000/Tape&Reel
LMBT5551LT1G
G1
3000/Tape&Reel
LMBT5551LT3G
G1
10000/Tape&Reel
MAXIMUM RATINGS
Rating
Collectorā-āEmitter Voltage
Symbol
MMBT5550
MMBT5551
V_CEO
Collectorā-āBase Voltage
MMBT5550
MMBT5551
V_CBO
Emitterā-āBase Voltage
Collector Current - Continuous
V_EBO
I_C
Value
140
160
160
180
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR-ā5 Board
(Note 1) @T_A = 25°C
Derate Above 25°C
P_D
225
mW
1.8
mW/°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation Alumina
Substrate (Note 2) @T_A = 25°C
Derate Above 25°C
R_qJA
P_D
556
°C/W
300
mW
2.4
mW/°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
R_qJA
417
T_J, T_stg -ā55 to +150
°C/W
°C
LMBT5550LT1G
LMBT5551LT1G
3
1
2
SOT–23
1
BASE
3
COLLECTOR
2
EMITTER
Rev.O 1/5