LMBT3946DW1T1G_15 Datasheet, PDF (1/11 Pages) Leshan Radio Company – Dual General Purpose Transistors

Dual General Purpose
LESHAN RADIO COMPANY, LTD.
Transistors
The LMBT3946DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
LMBT3946DW1T1G
S-LMBT3946DW1T1G
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
• h_FE, 100–300
6
5
4
• Low V_CE(sat), < 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
1
2
3
• Reduces Component Count
SOT-363/SC-88
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: LMBT3946DW1T1G = 46
• S- Prefix for Automotive and Other Applications Requiring Unique Site
We declare that the material of product
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ^{compliance with RoHS requirements.}
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
(NPN)
(PNP)
Collector-Base Voltage
(NPN)
(PNP)
Emitter-Base Voltage
(NPN)
(PNP)
Collector Current-Continuous
(NPN)
(PNP)
Symbol
V CEO
V _CBO
V _EBO
I_C
Value
40
-40
60
-40
6.0
-5.0
200
-200
Unit
Vdc
Vdc
Vdc
mAdc
3
2
1
Q₁
Q2
4
5
6
LMBT3946DW1T1*
*Q1 PNP
Q2 NPN
ORDERING INFORMATION
Device
Marking
LMBT3946DW1T1G 46
S-LMBT3946DW1T1G 46
LMBT3946DW1T3G 46
S-LMBT3946DW1T3G 46
Shipping
3000Units/Reel
3000Units/Reel
10000Units/Reel
10000Units/Reel
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Total Package Dissipation⁽¹⁾
T _A = 25°C
Thermal Resistance Junction
to Ambient
P_D
R_{θ J A}
150
mW
833 °C/W
Junction and Storage
TJ,T_stg –55 to +150 °C
Temperature Range
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
Rev.O 1/11