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LMBT3946DW1T1 Datasheet, PDF (1/11 Pages) Leshan Radio Company – Dual General Purpose Transistors
LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
The LMBT3946DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
• hFE, 100–300
• Low VCE(sat), < 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: LMBT3946DW1T1 = 46
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector-Emitter Voltage
V CEO
Vdc
(NPN)
40
(PNP)
-40
Collector-Base Voltage
(NPN)
V CBO
60
Vdc
(PNP)
-40
Emitter-Base Voltage
(NPN)
V EBO
Vdc
6.0
(PNP)
-5.0
Collector Current-Continuous
IC
(NPN)
mAdc
200
(PNP)
-200
Electrostatic Discharge
ESD HBM>16000, V
MM>2000
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
T A = 25°C
Thermal Resistance Junction
to Ambient
Symbol
PD
Rθ J A
Max
150
833
Unit
mW
°C/W
Junction and Storage
Temperature Range
TJ,Tstg –55 to +150 °C
LMBT3946DW1T1
6
5
4
1
2
3
SOT-363/SC-88
3
2
1
Q1
Q2
4
5
6
LMBT3946DW1T1*
*Q1 PNP
Q2 NPN
ORDERING INFORMATION
Device
Package Shipping
LMBT3946DW1T1 SOT-363 3000Units/Reel
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
LMBT3946DW1T1 1/11