LMBT3906TT1G Datasheet, PDF (1/6 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
FEATURE
ƽSimplifies Circuit Design.
ƽ We declare that the material of product compliance with
RoHS requirements.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT3906TT1G
2A
3000/Tape & Reel
LMBT3906TT3G
2A
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V CEO
V CBO
V EBO
IC
Value
– 40
– 40
– 5.0
– 200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 4 Board(1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
FR-4 Board (2), T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
200
mW
1.6
mW/°C
600
°C/W
300
mW
2.4
400
–55 to +150
mW/°C
°C/W
°C
LMBT3906TT1G
3
1
2
SC-89
1
BASE
3
COLLECTOR
2
EMITTER
DEVICE MARKING
LMBT3906TT1G = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
1. FR-4 Minimum Pad.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
2. FR-4 1.0 x 1.0 Inch Pad.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
Max
Unit
Vdc
—
Vdc
—
Vdc
—
nAdc
– 50
nAdc
– 50
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