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LMBT3906LT1G_15 Datasheet, PDF (1/7 Pages) Leshan Radio Company – General Purpose Transistors | |||
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LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
⢠We declare that the material of product compliance with RoHS requirements.
⢠S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LMBT3906LT1G
S-LMBT3906LT1G
ORDERING INFORMATION
Device
Marking
LMBT3906LT1G
S-LMBT3906LT1G
LMBT3906LT3G
S-LMBT3906LT3G
2A
2A
2A
2A
Shipping
3000/Tape & Reel
10000/Tape & Reel
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Symbol
V CEO
V CBO
V EBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board(1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
R θJA
T J , T stg
DEVICE MARKING
LMBT3906LT1G = 2A
Value
â 40
â 40
â 5.0
â 200
Unit
Vdc
Vdc
Vdc
mAdc
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
â55 to +150
mW/°C
°C/W
°C
3
1
2
SOTâ 23 (TOâ236AB)
1
BASE
3
COLLECTOR
2
EMITTER
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (3)
(I C = â1.0 mAdc, I B = 0)
CollectorâBase Breakdown Voltage
(I C = â10 µAdc, I E = 0)
EmitterâBase Breakdown Voltage
(I E = â10 µAdc, I C = 0)
Base Cutoff Current
(V CE = â30 Vdc, V EB = â3.0 Vdc)
Collector Cutoff Current
(V CE = â30 Vdc, V EB = â3.0 Vdc)
1. FRâ5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Min
â 40
â 40
â 5.0
â
â
Max
Unit
Vdc
â
Vdc
â
Vdc
â
nAdc
â 50
nAdc
â 50
Rev.O 1/7
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