LMBT3906LT1 Datasheet, PDF (1/6 Pages) Leshan Radio Company – General Purpose Transistors

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
LMBT3906LT1
3
ORDERING INFORMATION
Device
Package
LMBT3906LT1 SOT–23
LMBT3906LT1G SOT–23
Shipping
3000/Tape & Reel
3000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V CEO
V CBO
V EBO
IC
Value
– 40
– 40
– 5.0
– 200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
T A =25 °C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
DEVICE MARKING
LMBT3906LT1 = 2A
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (3)
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –10 µAdc, I E = 0)
Emitter–Base Breakdown Voltage
(I E = –10 µAdc, I C = 0)
Base Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
Collector Cutoff Current
(V CE = –30 Vdc, V EB = –3.0 Vdc)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
V (BR)CEO
V (BR)CBO
V (BR)EBO
I BL
I CEX
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Width <300 µs; Duty Cycle <2.0%.
Min
– 40
– 40
– 5.0
—
—
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Max
Unit
Vdc
—
Vdc
—
Vdc
—
nAdc
– 50
nAdc
– 50
LMBT3906LT1-1/6