LMBT3906DW1T1G Datasheet, PDF (1/8 Pages) Leshan Radio Company – Dual Bias Resistor Transistor

LESHAN RADIO COMPANY, LTD.
Dual Bias Resistor
Transistor
LMBT3906DW1T1G
The LMBT3906DW1T1 device isa spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
• hFE, 100–300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: LMBT3906DW1T1G = A2
Featrues
z We declare that the material of product compliance with RoHS requirements.
65 ₄
1
2
3
SOT-363
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Electrostatic Discharge
Symbol
V_CEO
V_CBO
V_EBO
I_C
ESD
Value
–40
–40
–5.0
–200
HBM>16000,
MM>2000
Unit
Vdc
Vdc
Vdc
mAdc
V
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Symbol
P_D
R_qJA
Max
150
833
Unit
mW
°C/W
Junction and Storage
Temperature Range
T_J, T_stg –55 to +150
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
ORDERING INFORMATION
Device
Marking
LMBT3906DW1T1G A2
LMBT3906DW1T1G A2
Shipping
3000 Units/Reel
10000 Units/Reel
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