LMBT3904DW1T1G Datasheet, PDF (1/7 Pages) Leshan Radio Company – Dual General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistor
The LMBT3904DW1T1 device is a spin–off of our popular
SOT–23/SOT–323 three–leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT–363
six–leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low–power surface mount
applications where board space is at a premium.
• hFE, 100–300
• Low VCE(sat), ≤ 0.4 V
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Available in 8 mm, 7–inch/3,000 Unit Tape and Reel
• Device Marking: LMBT3904DW1T1G = MA
Featrues
z We declare that the material of product compliance with RoHS requirements.
LMBT3904DW1T1G
65 ₄
1
2
3
SOT-363
(3)
(2)
(1)
Q₁
Q₂
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current – Continuous
Electrostatic Discharge
THERMAL CHARACTERISTICS
Characteristic
Total Package Dissipation(1)
TA = 25°C
Thermal Resistance Junction to
Ambient
Junction and Storage
Temperature Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
ESD
Value
40
60
6.0
200
HBM>16000,
MM>2000
Symbol
P_D
Max
150
R_qJA
833
T_J, T_stg –55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
V
Unit
mW
°C/W
°C
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1. recommended footprint.
ORDERING INFORMATION
Device
Marking
Shipping
LMBT3904DW1T1G MA
LMBT3904DW1T3G MA
3000 Units/Reel
10000 Units/Reel
1/10