LMBT2907AWT1G Datasheet, PDF (1/3 Pages) Leshan Radio Company – General Purpose Transistor

LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
PNP Silicon
FEATURE
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device
LMBT2907AWT1G
Mar king
20
LMBT2907AWT3G
20
Shipping
3000/Tape&Reel
10000/Tape&Reel
LMBT2907AWT1G
3
1
2
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V _CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
– 60
– 60
– 5.0
– 600
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
Symbol
PD
RθJA
TJ , Tstg
Max
150
833
–55 to +150
LMBT2907AWT1G =20
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2)
V (BR)CEO
(I C = – 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage
(I C = – 10 mAdc, I E = 0)
V _(BR)CBO
Emitter–Base Breakdown Voltage
(I E = –10µAdc, I C = 0)
V (BR)EBO
Base Cutoff Current
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
I BL
Collector Cutoff Current
I CEX
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
–60
–60
–5.0
—
—
Unit
mW
°C/W
°C
Max
—
—
—
– 50
– 50
Unit
Vdc
Vdc
Vdc
nAdc
nAdc
3
COLLECTOR
2
EMITTER
1/3